| PART |
Description |
Maker |
| K1S32161CC K1S32161CC-FI70 K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1S16161CA-I K1S16161CA DSK1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EMC326SP16AJT-10L EMC326SP16AJT-10LF EMC326SP16AJT |
2Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| EMC326SP16AKS-45L EMC326SP16AKS-45LF EMC326SP16AKS |
2Mx16 bit CellularRAM AD-MUX
|
Emerging Memory & Logic Solutions Inc
|
| KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000CG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000AG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| STK22C48-P45 STK22C48-P45I STK22C48-N20 STK22C48-N |
DIODE TVS 170V 400W UNI 5% SMA
DIODE TVS 17V 400W BIDIR 5% SMA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA RoHS Compliant: Yes
DIODE TVS 100V 400W UNI 5% SMA
DIODE TVS 10V 400W UNI 5% SMA
DIODE TVS 30V 400W BIDIR 5% SMA
NVRAM (EEPROM Based)
DIODE TVS 120V 400W BIDIR 5% SMA
DIODE TVS 300V 400W UNI 5% SMA
DIODE TVS 36V 400W UNI 5% SMA
DIODE TVS 130V 400W UNI 5% SMA
DIODE TVS 180V 400W UNI 5% SMA
DIODE TVS 18V 400W BIDIR 5% SMA
DIODE TVS 200V 400W UNI 5% SMA
DIODE TVS 150V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 20V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 400V 400W UNI 5% SMA NVRAM中（EEPROM的基础
|
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAMA82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
